Answer:
The image distance is 20.0 cm.
Explanation:
Given that,
Power = 1.55 dp
Distance between book to eye = 26.0+3.00=29.0 cm
We need to calculate the focal length
Using formula of focal length
Put the value into the formula
We need to calculate the image distance
Using lens formula
Put the value into the formula
Hence, The image distance is 20.0 cm.
Thank you for posting your Physics question here. I hope the answer helps. Upon calculating the ramp with the horizontal the answer is 20.49 Deg. Below is the solution:
Y = 7 m.
<span>r = 20 m. </span>
<span>sinA = Y/r = 7/20 = 0.35. </span>
<span>A = 20.49 Deg.</span>
The potential difference between points a and b is zero.
<h3>Total emf of the series circuit</h3>
The total emf in the circuit is the sum of all the emf in the circuit.
emf(total) = 1.5 + 1.5 = 3.0 V
<h3>Potential difference</h3>
The potential difference between two points, a and b is calculated as follows;
V(ab) = Va - Vb
V(ab) = 1.5 - 1.5
V(ab) = 0
Thus, the potential difference between points a and b is zero.
Learn more about potential difference here: brainly.com/question/3406867
<h2>Answers:</h2><h2 /><h2>a) Arrow B</h2><h2>b) Arrow E</h2>
Explanation:
Refraction is a phenomenon in which a wave (the light in this case) bends or changes its direction <u>when passing through a medium with a refractive index different from the other medium.</u> Where the Refractive index is a number that describes how fast light propagates through a medium or material.
According to this, if we observe the rays A an D passing throgh the biconcave lens, we will have two mediums:
1) The air
2)The material of the biconcave lens
This two mediums have different refractive indexes, hence the rays will change the direction.
-For the incident ray A, the corresponding refractive ray is B, because is the ray that bends after passing throgh the lens
-For the incident ray D, the refracted ray is E following the same principle.
Answer:
The structure of Germanium crystals will be destroyed at higher temperature. However, Silicon crystals are not easily damaged by excess heat. Peak Inverse Voltage ratings of Silicon diodes are greater than Germanium diodes. Si is less expensive due to the greater abundance of element.